Packaging :
Drain to Source Voltage (Vdss) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
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RFQ
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RFQ
2,280
In-stock
Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247 555W (Tc) N-Channel 1200V 80A (Tc) 55 mOhm @ 40A, 20V 2.5V @ 1mA 235nC @ 20V - 20V +25V, -10V
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RFQ
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RFQ
2,226
In-stock
Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247 [B] 300W (Tc) N-Channel 700V 65A (Tc) 70 mOhm @ 32.5A, 20V 2.5V @ 1mA 125nC @ 20V - 20V +25V, -10V
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RFQ
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RFQ
1,995
In-stock
Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247 175W (Tc) N-Channel 1200V 25A (Tc) 175 mOhm @ 10A, 20V 2.5V @ 1mA 72nC @ 20V - 20V +25V, -10V
APT40SM120B
RFQ
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RFQ
1,687
In-stock
Microsemi Corporation MOSFET N-CH 1200V 41A TO247 - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247 273W (Tc) N-Channel 1200V 41A (Tc) 100 mOhm @ 20A, 20V 3V @ 1mA (Typ) 130nC @ 20V 2560pF @ 1000V 20V +25V, -10V
CMF20120D
RFQ
VIEW
RFQ
783
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 42A TO-247-3 Z-FET™ Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 135°C (TJ) Through Hole TO-247-3 215W (Tc) N-Channel 1200V 42A (Tc) 110 mOhm @ 20A, 20V 4V @ 1mA 90.8nC @ 20V 1915pF @ 800V 20V +25V, -5V
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RFQ
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RFQ
3,389
In-stock
Microsemi Corporation MOSFET N-CH 700V TO247 - Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247 65W (Tc) N-Channel 1700V 5A (Tc) 1.25 Ohm @ 2.5A, 20V 3.2V @ 500µA 21nC @ 20V 249pF @ 1000V 20V +25V, -10V
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RFQ
VIEW
RFQ
2,631
In-stock
Microsemi Corporation MOSFET N-CH 700V TO247 - Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247 176W (Tc) N-Channel 700V 35A (Tc) 145 mOhm @ 10A, 20V 2.5V @ 1mA 67nC @ 20V 1035pF @ 700V 20V +25V, -10V
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RFQ
VIEW
RFQ
2,985
In-stock
Microsemi Corporation MOSFET N-CH 700V TO247 - Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247 556W (Tc) N-Channel 700V 110A (Tc) 45 mOhm @ 60A, 20V 2.4V @ 1mA 220nC @ 20V 3950pF @ 700V 20V +25V, -10V
IXTX46N50L
RFQ
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RFQ
789
In-stock
IXYS MOSFET N-CH 500V 46A PLUS247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole PLUS247™-3 700W (Tc) N-Channel 500V 46A (Tc) 160 mOhm @ 500mA, 20V 6V @ 250µA 260nC @ 15V 7000pF @ 25V 20V ±30V
IXTX17N120L
RFQ
VIEW
RFQ
3,193
In-stock
IXYS MOSFET N-CH 1200V 17A PLUS247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole PLUS247™-3 700W (Tc) N-Channel 1200V 17A (Tc) 900 mOhm @ 8.5A, 20V 5V @ 250µA 155nC @ 15V 8300pF @ 25V 20V ±30V
IXTX8N150L
RFQ
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RFQ
3,940
In-stock
IXYS MOSFET N-CH 1500V 8A PLUS247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole PLUS247™-3 700W (Tc) N-Channel 1500V 8A (Tc) 3.6 Ohm @ 4A, 20V 8V @ 250µA 250nC @ 15V 8000pF @ 25V 20V ±30V
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RFQ
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RFQ
606
In-stock
STMicroelectronics MOSFET N-CH 1200V 65A HIP247 - Active - SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole HiP247™ 318W (Tc) N-Channel 1200V 65A (Tc) 69 mOhm @ 40A, 20V 3V @ 1mA 122nC @ 20V 1900pF @ 400V 20V +25V, -10V
IXTH2N150L
RFQ
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RFQ
2,332
In-stock
IXYS MOSFET N-CH 1500V 2A TO-247 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247 290W (Tc) N-Channel 1500V 2A (Tc) 15 Ohm @ 1A, 20V 8.5V @ 250µA 72nC @ 20V 1470pF @ 25V 20V ±30V
C2M0045170D
RFQ
VIEW
RFQ
1,223
In-stock
Cree/Wolfspeed MOSFET NCH 1.7KV 72A TO247 C2M™ Active Tube SiCFET (Silicon Carbide) -40°C ~ 150°C (TJ) Through Hole TO-247-3 520W (Tc) N-Channel 1700V 72A (Tc) 70 mOhm @ 50A, 20V 4V @ 18mA 188nC @ 20V 3672pF @ 1kV 20V +25V, -10V
C2M0025120D
RFQ
VIEW
RFQ
603
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 90A TO-247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 463W (Tc) N-Channel 1200V 90A (Tc) 34 mOhm @ 50A, 20V 2.4V @ 10mA 161nC @ 20V 2788pF @ 1000V 20V +25V, -10V
C2M0040120D
RFQ
VIEW
RFQ
3,736
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 60A TO-247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 330W (Tc) N-Channel 1200V 60A (Tc) 52 mOhm @ 40A, 20V 2.8V @ 10mA 115nC @ 20V 1893pF @ 1000V 20V +25V, -10V
C2M0080120D
RFQ
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RFQ
1,535
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 31.6A TO247 C2M™ Active Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 192W (Tc) N-Channel 1200V 36A (Tc) 98 mOhm @ 20A, 20V 4V @ 5mA 62nC @ 5V 950pF @ 1000V 20V +25V, -10V
C2M0160120D
RFQ
VIEW
RFQ
2,838
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 19A TO-247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 125W (Tc) N-Channel 1200V 19A (Tc) 196 mOhm @ 10A, 20V 2.5V @ 500µA 32.6nC @ 20V 527pF @ 800V 20V +25V, -10V
SCT50N120
RFQ
VIEW
RFQ
2,581
In-stock
STMicroelectronics MOSFET N-CH 1.2KV TO247-3 - Active Tube SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole HiP247™ 318W (Tc) N-Channel 1200V 65A (Tc) 69 mOhm @ 40A, 20V 3V @ 1mA 122nC @ 20V 1900pF @ 400V 20V +25V, -10V
C2M0280120D
RFQ
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RFQ
2,566
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 10A TO-247-3 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 62.5W (Tc) N-Channel 1200V 10A (Tc) 370 mOhm @ 6A, 20V 2.8V @ 1.25mA (Typ) 20.4nC @ 20V 259pF @ 1000V 20V +25V, -10V
C2M1000170D
RFQ
VIEW
RFQ
2,972
In-stock
Cree/Wolfspeed MOSFET N-CH 1700V 4.9A TO247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 69W (Tc) N-Channel 1700V 4.9A (Tc) 1.1 Ohm @ 2A, 20V 2.4V @ 100µA 13nC @ 20V 191pF @ 1000V 20V +25V, -10V
SCT30N120
RFQ
VIEW
RFQ
1,824
In-stock
STMicroelectronics MOSFET N-CH 1200V 45A HIP247 - Active Tube SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole HiP247™ 270W (Tc) N-Channel 1200V 40A (Tc) 100 mOhm @ 20A, 20V 2.6V @ 1mA (Typ) 105nC @ 20V 1700pF @ 400V 20V +25V, -10V
SCT20N120
RFQ
VIEW
RFQ
2,775
In-stock
STMicroelectronics MOSFET N-CH 1200V 20A HIP247 - Active Tube SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole HiP247™ 175W (Tc) N-Channel 1200V 20A (Tc) 290 mOhm @ 10A, 20V 3.5V @ 1mA 45nC @ 20V 650pF @ 400V 20V +25V, -10V
SCT10N120
RFQ
VIEW
RFQ
3,118
In-stock
STMicroelectronics MOSFET N-CH 1.2KV TO247-3 - Active Tube SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole HiP247™ 150W (Tc) N-Channel 1200V 12A (Tc) 690 mOhm @ 6A, 20V 3.5V @ 250µA 22nC @ 20V 290pF @ 400V 20V +25V, -10V
CMF10120D
RFQ
VIEW
RFQ
965
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 24A TO247 Z-FET™ Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 135°C (TJ) Through Hole TO-247 134W (Tc) N-Channel 1200V 24A (Tc) 220 mOhm @ 10A, 20V 4V @ 500µA 47.1nC @ 20V 928pF @ 800V 20V +25V, -5V
IXTH24N50L
RFQ
VIEW
RFQ
1,083
In-stock
IXYS MOSFET N-CH 500V 24A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247 (IXTH) 400W (Tc) N-Channel 500V 24A (Tc) 300 mOhm @ 500mA, 20V 5V @ 250µA 160nC @ 20V 2500pF @ 25V 20V ±30V
IXTH12N100L
RFQ
VIEW
RFQ
1,905
In-stock
IXYS MOSFET N-CH 1000V 12A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247 (IXTH) 400W (Tc) N-Channel 1000V 12A (Tc) 1.3 Ohm @ 500mA, 20V 5V @ 250µA 155nC @ 20V 2500pF @ 25V 20V ±30V
LSIC1MO120E0080
RFQ
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RFQ
2,705
In-stock
Littelfuse Inc. MOSFET SIC 1200V 25A TO-247-3L - Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C Through Hole TO-247-3 179W (Tc) N-Channel 1200V 39A (Tc) 100 mOhm @ 20A, 20V 4V @ 10mA 95nC @ 20V 1825pF @ 800V 20V +22V, -6V