Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STY30NK90Z
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RFQ
1,094
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STMicroelectronics MOSFET N-CH 900V 26A MAX247 SuperMESH™ Obsolete Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-247-3 MAX247™ 450W (Tc) N-Channel - 900V 26A (Tc) 260 mOhm @ 14A, 10V 4.5V @ 150µA 490nC @ 10V 12000pF @ 25V 10V ±30V
IXTX90P20P
RFQ
VIEW
RFQ
988
In-stock
IXYS MOSFET P-CH 200V 90A PLUS247 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 890W (Tc) P-Channel - 200V 90A (Tc) 44 mOhm @ 22A, 10V 4V @ 1mA 205nC @ 10V 12000pF @ 25V 10V ±20V
IXFX44N80P
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RFQ
1,937
In-stock
IXYS MOSFET N-CH 800V 44A PLUS247 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1040W (Tc) N-Channel - 800V 44A (Tc) 190 mOhm @ 22A, 10V 5V @ 8mA 198nC @ 10V 12000pF @ 25V 10V ±30V
IXFX64N60P
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RFQ
2,449
In-stock
IXYS MOSFET N-CH 600V 64A PLUS247 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1040W (Tc) N-Channel - 600V 64A (Tc) 96 mOhm @ 500mA, 10V 5V @ 8mA 200nC @ 10V 12000pF @ 25V 10V ±30V