- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,352
In-stock
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STMicroelectronics | MOSFET N-CH 600V 30A TO-247 | MDmesh™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 313W (Tc) | N-Channel | - | 600V | 30A (Tc) | 135 mOhm @ 13A, 10V | 5V @ 250µA | 102nC @ 10V | 2900pF @ 25V | 10V | ±30V | |||
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2,177
In-stock
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STMicroelectronics | MOSFET N-CH 800V 11A TO-247 | PowerMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 190W (Tc) | N-Channel | - | 800V | 11A (Tc) | 800 mOhm @ 5.5A, 10V | 5V @ 250µA | 70nC @ 10V | 2900pF @ 25V | 10V | ±30V | |||
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1,696
In-stock
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STMicroelectronics | MOSFET N-CH 1KV 7.3A TO-247 | PowerMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 190W (Tc) | N-Channel | - | 1000V | 7.3A (Tc) | 1.45 Ohm @ 3.6A, 10V | 5V @ 250µA | 95nC @ 10V | 2900pF @ 25V | 10V | ±30V | |||
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1,269
In-stock
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Infineon Technologies | MOSFET N-CH 55V 81A TO-247AC | HEXFET® | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 170W (Tc) | N-Channel | - | 55V | 81A (Tc) | 12 mOhm @ 43A, 10V | 4V @ 250µA | 130nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
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792
In-stock
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Vishay Siliconix | MOSFET N-CH 900V 6.7A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 190W (Tc) | N-Channel | - | 900V | 6.7A (Tc) | 1.6 Ohm @ 4A, 10V | 4V @ 250µA | 200nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
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3,081
In-stock
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IXYS | MOSFET N-CH 900V 12A PLUS247 | HiPerFET™ | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 300W (Tc) | N-Channel | - | 900V | 12A (Tc) | 900 mOhm @ 6A, 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
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963
In-stock
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IXYS | MOSFET N-CH 1000V 12A TO-247AD | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 300W (Tc) | N-Channel | - | 1000V | 12A (Tc) | 1.05 Ohm @ 6A, 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
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VIEW |
3,213
In-stock
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Vishay Siliconix | MOSFET N-CH 900V 6.7A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 190W (Tc) | N-Channel | - | 900V | 6.7A (Tc) | 1.6 Ohm @ 4A, 10V | 4V @ 250µA | 200nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
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VIEW |
1,367
In-stock
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Infineon Technologies | MOSFET N-CH 55V 81A TO-247AC | HEXFET® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 170W (Tc) | N-Channel | - | 55V | 81A (Tc) | 12 mOhm @ 43A, 10V | 4V @ 250µA | 130nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
