Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPW24N60CFDFKSA1
RFQ
VIEW
RFQ
830
In-stock
Infineon Technologies MOSFET N-CH 650V 21.7A TO-247 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 240W (Tc) N-Channel - 650V 21.7A (Tc) 185 mOhm @ 15.4A, 10V 5V @ 1.2mA 143nC @ 10V 3160pF @ 25V 10V ±20V
IXFH60N60X
RFQ
VIEW
RFQ
1,774
In-stock
IXYS MOSFET N-CH 600V 60A TO247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 890W (Tc) N-Channel - 600V 60A (Tc) 55 mOhm @ 30A, 10V 4.5V @ 8mA 143nC @ 10V 5800pF @ 25V 10V ±30V
IXTH64N65X
RFQ
VIEW
RFQ
1,241
In-stock
IXYS MOSFET N-CH 650V 64A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 890W (Tc) N-Channel - 650V 64A (Tc) 51 mOhm @ 32A, 10V 5V @ 250µA 143nC @ 10V 5500pF @ 25V 10V ±30V
STW69N65M5
RFQ
VIEW
RFQ
883
In-stock
STMicroelectronics MOSFET N-CH 650V 58A TO-247 MDmesh™ V Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 330W (Tc) N-Channel - 650V 58A (Tc) 45 mOhm @ 29A, 10V 5V @ 250µA 143nC @ 10V 6420pF @ 100V 10V ±25V
IXFH80N65X2
RFQ
VIEW
RFQ
1,309
In-stock
IXYS MOSFET N-CH 650V 80A TO-247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 890W (Tc) N-Channel - 650V 80A (Tc) 40 mOhm @ 40A, 10V 5.5V @ 4mA 143nC @ 10V 8245pF @ 25V 10V ±30V