Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXTH30N25
RFQ
VIEW
RFQ
2,701
In-stock
IXYS MOSFET N-CH 250V 30A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247 (IXTH) 200W (Tc) N-Channel - 250V 30A (Tc) 75 mOhm @ 15A, 10V 4V @ 250µA 136nC @ 10V 3950pF @ 25V 10V ±20V
IXFH220N06T3
RFQ
VIEW
RFQ
904
In-stock
IXYS 60V/220A TRENCHT3 HIPERFET MOSFE HiperFET™, TrenchT3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247 440W (Tc) N-Channel - 60V 220A (Tc) 4 mOhm @ 100A, 10V 4V @ 250µA 136nC @ 10V 8500pF @ 25V 10V ±20V
AOK2500L
RFQ
VIEW
RFQ
2,481
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247 3.1W (Ta), 500W (Tc) N-Channel - 150V 14A (Ta), 180A (Tc) 6.2 mOhm @ 20A, 10V 3.5V @ 250µA 136nC @ 10V 6460pF @ 75V 6V, 10V ±20V
FCH040N65S3-F155
RFQ
VIEW
RFQ
2,010
In-stock
ON Semiconductor MOSFET N-CH 650V 65A TO247-3 SuperFET® III Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C Through Hole TO-247-3 417W (Tc) N-Channel - 650V 65A (Tc) 40 mOhm @ 32.5A, 10V 4.5V @ 6.5mA 136nC @ 10V 4740pF @ 400V 10V ±30V