Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STW70N60M2-4
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2,080
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STMicroelectronics POWER MOSFET MDmesh™ M2 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 450W (Tc) N-Channel - 600V 68A (Tc) 40 mOhm @ 34A, 10V 4V @ 250µA 118nC @ 10V 5200pF @ 100V 10V ±25V
IPW65R110CFDAFKSA1
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3,947
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Infineon Technologies MOSFET N-CH 650V 31.2A TO247 Automotive, AEC-Q101, CoolMOS™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 277.8W (Tc) N-Channel - 650V 31.2A (Tc) 110 mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118nC @ 10V 3240pF @ 100V 10V ±20V
IPW65R110CFD
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1,175
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Infineon Technologies MOSFET N-CH 650V 31.2A TO247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 277.8W (Tc) N-Channel - 650V 31.2A (Tc) 110 mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118nC @ 10V 3240pF @ 100V 10V ±20V
STW70N60M2
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2,523
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STMicroelectronics MOSFET N-CH 600V 68A TO247 MDmesh™ II Plus Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 450W (Tc) N-Channel - 600V 68A (Tc) 40 mOhm @ 34A, 10V 4V @ 250µA 118nC @ 10V 5200pF @ 100V 10V ±25V