Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFX44N80Q3
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2,560
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IXYS MOSFET N-CH 800V 44A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1250W (Tc) N-Channel - 800V 44A (Tc) 190 mOhm @ 22A, 10V 6.5V @ 8mA 185nC @ 10V 9840pF @ 25V 10V ±30V
IXFR32N100Q3
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2,312
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IXYS MOSFET N-CH 1000V 23A ISOPLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 ISOPLUS247™ 570W (Tc) N-Channel - 1000V 23A (Tc) 350 mOhm @ 16A, 10V 6.5V @ 8mA 195nC @ 10V 9940pF @ 25V 10V ±30V
IXFX32N100Q3
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RFQ
1,163
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IXYS MOSFET N-CH 1000V 32A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1250W (Tc) N-Channel - 1000V 32A (Tc) 320 mOhm @ 16A, 10V 6.5V @ 8mA 195nC @ 10V 9940pF @ 25V 10V ±30V
IXFX80N50Q3
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RFQ
3,367
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IXYS MOSFET N-CH 500V 80A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1250W (Tc) N-Channel - 500V 80A (Tc) 65 mOhm @ 40A, 10V 6.5V @ 8mA 200nC @ 10V 10000pF @ 25V 10V ±30V
IXFR80N50Q3
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RFQ
2,896
In-stock
IXYS MOSFET N-CH 500V 50A ISOPLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 ISOPLUS247™ 570W (Tc) N-Channel - 500V 50A (Tc) 72 mOhm @ 40A, 10V 6.5V @ 8mA 200nC @ 10V 10000pF @ 25V 10V ±30V