Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STMicroelectronics MOSFET N-CH 600V 20A TO-247 FDmesh™ Active Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-247-3 214W (Tc) N-Channel - 600V 20A (Tc) 290 mOhm @ 10A, 10V 5V @ 250µA 37nC @ 10V 1300pF @ 25V 10V ±30V