Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFH22N55
RFQ
VIEW
RFQ
3,252
In-stock
IXYS MOSFET N-CH 550V 22A TO-247AD HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 300W (Tc) N-Channel - 550V 22A (Tc) 270 mOhm @ 11A, 10V 4.5V @ 4mA 170nC @ 10V 4200pF @ 25V 10V ±20V
IXTH22N50P
RFQ
VIEW
RFQ
966
In-stock
IXYS MOSFET N-CH 500V 22A TO-247 PolarHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 350W (Tc) N-Channel - 500V 22A (Tc) 270 mOhm @ 11A, 10V 5.5V @ 250µA 50nC @ 10V 2630pF @ 25V 10V ±30V
IRFP460_R4943
RFQ
VIEW
RFQ
1,274
In-stock
ON Semiconductor MOSFET N-CH 500V 20A TO-247 - Obsolete Tube MOSFET (Metal Oxide) - Through Hole TO-247-3 TO-247 - N-Channel - 500V 20A (Tc) 270 mOhm @ 11A, 10V 4V @ 250µA 190nC @ 10V 4100pF @ 25V - -
IXFH22N50P
RFQ
VIEW
RFQ
752
In-stock
IXYS MOSFET N-CH 500V 22A TO-247 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 350W (Tc) N-Channel - 500V 22A (Tc) 270 mOhm @ 11A, 10V 5.5V @ 2.5mA 50nC @ 10V 2630pF @ 25V 10V ±30V