- Manufacture :
- Technology :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,738
In-stock
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Rohm Semiconductor | MOSFET NCH 650V 93A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 339W (Tc) | N-Channel | - | 650V | 93A (Tc) | 28.6 mOhm @ 36A, 18V | 5.6V @ 18.2mA | 133nC @ 18V | 2208pF @ 500V | 18V | +22V, -4V | |||
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VIEW |
1,147
In-stock
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Infineon Technologies | MOSFET N-CH 250V 93A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 520W (Tc) | N-Channel | - | 250V | 93A (Tc) | 17.5 mOhm @ 56A, 10V | 5V @ 250µA | 270nC @ 10V | 10880pF @ 50V | 10V | ±20V | |||
