- Manufacture :
- Series :
- Technology :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
656
In-stock
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IXYS | MOSFET N-CH 500V 55A PLUS247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 625W (Tc) | N-Channel | - | 500V | 55A (Tc) | 80 mOhm @ 500mA, 10V | 4.5V @ 8mA | 330nC @ 10V | 9400pF @ 25V | 10V | ±20V | ||||
VIEW |
2,729
In-stock
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Rohm Semiconductor | MOSFET NCH 1.2KV 55A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 262W (Tc) | N-Channel | - | 1200V | 55A (Tc) | 52 mOhm @ 20A, 18V | 5.6V @ 10mA | 107nC @ 18V | 1337pF @ 800V | 18V | +22V, -4V | ||||
VIEW |
663
In-stock
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IXYS-RF | MOSFET N-CH 500V 55A PLUS247 | HiPerRF™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 560W (Tc) | N-Channel | - | 500V | 55A (Tc) | 85 mOhm @ 27.5A, 10V | 5.5V @ 8mA | 195nC @ 10V | 6700pF @ 25V | 10V | ±20V |