- Manufacture :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
VIEW |
3,666
In-stock
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GeneSiC Semiconductor | TRANS SJT 1200V 5A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 106W (Tc) | - | 1200V | 5A (Tc) | 280 mOhm @ 5A | - | - | - | - | - | |||
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|
VIEW |
1,735
In-stock
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IXYS | MOSFET N-CH 2500V 5A PLUS247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 960W (Tc) | N-Channel | 2500V | 5A (Tc) | 8.8 Ohm @ 2.5A, 10V | 5V @ 1mA | 200nC @ 10V | 8560pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,389
In-stock
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Microsemi Corporation | MOSFET N-CH 700V TO247 | - | Obsolete | Tube | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 65W (Tc) | N-Channel | 1700V | 5A (Tc) | 1.25 Ohm @ 2.5A, 20V | 3.2V @ 500µA | 21nC @ 20V | 249pF @ 1000V | 20V | +25V, -10V | |||
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|
VIEW |
3,272
In-stock
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IXYS | MOSFET N-CH 1000V 5A TO247AD | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 180W (Tc) | N-Channel | 1000V | 5A (Tc) | 2 Ohm @ 2.5A, 10V | 4.5V @ 250µA | 130nC @ 10V | 2600pF @ 25V | 10V | ±20V | |||
