- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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- Gate Charge (Qg) (Max) @ Vgs :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,916
In-stock
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GeneSiC Semiconductor | TRANS SJT 1700V 16A TO-247AB | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 282W (Tc) | - | - | 1700V | 16A (Tc) (90°C) | 110 mOhm @ 16A | - | - | - | - | - | |||
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VIEW |
2,440
In-stock
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GeneSiC Semiconductor | TRANS SJT 1.7KV 100A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 583W (Tc) | - | - | 1700V | 100A (Tc) | 25 mOhm @ 50A | - | - | - | - | - | |||
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VIEW |
3,389
In-stock
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Microsemi Corporation | MOSFET N-CH 700V TO247 | - | Obsolete | Tube | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 65W (Tc) | N-Channel | - | 1700V | 5A (Tc) | 1.25 Ohm @ 2.5A, 20V | 3.2V @ 500µA | 21nC @ 20V | 249pF @ 1000V | 20V | +25V, -10V | |||
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VIEW |
1,223
In-stock
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Cree/Wolfspeed | MOSFET NCH 1.7KV 72A TO247 | C2M™ | Active | Tube | SiCFET (Silicon Carbide) | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 520W (Tc) | N-Channel | - | 1700V | 72A (Tc) | 70 mOhm @ 50A, 20V | 4V @ 18mA | 188nC @ 20V | 3672pF @ 1kV | 20V | +25V, -10V | |||
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VIEW |
2,972
In-stock
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Cree/Wolfspeed | MOSFET N-CH 1700V 4.9A TO247 | Z-FET™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 69W (Tc) | N-Channel | - | 1700V | 4.9A (Tc) | 1.1 Ohm @ 2A, 20V | 2.4V @ 100µA | 13nC @ 20V | 191pF @ 1000V | 20V | +25V, -10V | |||
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VIEW |
3,444
In-stock
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STMicroelectronics | MOSFET N-CH 1700V 2.6A TO247-3 | PowerMESH™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 160mW | N-Channel | - | 1700V | 2.6A (Tc) | 13 Ohm @ 1.3A, 10V | 5V @ 250µA | 44nC @ 10V | 1100pF @ 100V | 10V | ±30V | |||
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VIEW |
3,608
In-stock
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IXYS | MOSFET N-CH 1700V 2A TO-247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 568W (Tc) | N-Channel | Depletion Mode | 1700V | 2A (Tj) | 6.5 Ohm @ 1A, 0V | - | 110nC @ 5V | 3650pF @ 10V | 0V | ±20V | |||
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VIEW |
3,501
In-stock
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GeneSiC Semiconductor | TRANS SJT 1700V 4A TO-247AB | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 106W (Tc) | - | - | 1700V | 4A (Tc) (95°C) | 480 mOhm @ 4A | - | - | - | - | - | |||
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VIEW |
3,295
In-stock
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GeneSiC Semiconductor | TRANS SJT 1700V 8A TO-247AB | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 48W (Tc) | - | - | 1700V | 8A (Tc) (90°C) | 250 mOhm @ 8A | - | - | - | - | - | |||
