Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPW50R190CEFKSA1
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1,534
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Infineon Technologies MOSFET N-CH 500V 18.5A TO247 CoolMOS™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole PG-TO247-3 127W (Tc) N-Channel Super Junction 500V 18.5A (Tc) 190 mOhm @ 6.2A, 13V 3.5V @ 510µA 47.2nC @ 10V 1137pF @ 100V 13V ±20V
TK31N60W,S1VF
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1,355
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Toshiba Semiconductor and Storage MOSFET N CH 600V 30.8A TO247 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247 230W (Tc) N-Channel Super Junction 600V 30.8A (Ta) 88 mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86nC @ 10V 3000pF @ 300V 10V ±30V
APT77N60BC6
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1,573
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Microsemi Corporation MOSFET N-CH 600V 77A TO-247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247 [B] 481W (Tc) N-Channel Super Junction 600V 77A (Tc) 41 mOhm @ 44.4A, 10V 3.6V @ 2.96mA 260nC @ 10V 13600pF @ 25V 10V ±20V
TK16N60W,S1VF
RFQ
VIEW
RFQ
2,287
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Toshiba Semiconductor and Storage MOSFET N CH 600V 15.8A TO247 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247 130W (Tc) N-Channel Super Junction 600V 15.8A (Ta) 190 mOhm @ 7.9A, 10V 3.7V @ 790µA 38nC @ 10V 1350pF @ 300V 10V ±30V
IPW50R280CEFKSA1
RFQ
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RFQ
3,470
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Infineon Technologies MOSFET N-CH 500V 13A PG-TO247 CoolMOS™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole PG-TO247-3 92W (Tc) N-Channel Super Junction 500V 13A (Tc) 280 mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6nC @ 10V 773pF @ 100V 13V ±20V
FCH060N80-F155
RFQ
VIEW
RFQ
1,892
In-stock
ON Semiconductor MOSFET N-CH 800V 56A TO247 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247 Long Leads 500W (Tc) N-Channel Super Junction 800V 56A (Tc) 60 mOhm @ 29A, 10V 4.5V @ 5.8mA 350nC @ 10V 14685pF @ 100V 10V ±20V
FCH085N80-F155
RFQ
VIEW
RFQ
2,889
In-stock
ON Semiconductor MOSFET N-CH 800V 46A TO247 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247 446W (Tc) N-Channel Super Junction 800V 46A (Tc) 85 mOhm @ 23A, 10V 4.5V @ 4.6mA 255nC @ 10V 10825pF @ 100V 10V ±20V
FCH041N65EF-F155
RFQ
VIEW
RFQ
3,102
In-stock
ON Semiconductor MOSFET N-CH 650V 76A TO247 FRFET®, SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247 Long Leads 595W (Tc) N-Channel Super Junction 650V 76A (Tc) 41 mOhm @ 38A, 10V 5V @ 7.6mA 298nC @ 10V 12560pF @ 100V 10V ±20V
FCH067N65S3-F155
RFQ
VIEW
RFQ
2,651
In-stock
ON Semiconductor MOSFET N-CH 650V 44A TO247 SuperFET® III Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247 Long Leads 312W (Tc) N-Channel Super Junction 650V 44A (Tc) 67 mOhm @ 22A, 10V 4.5V @ 4.4mA 78nC @ 10V 3090pF @ 400V 10V ±30V
IXKH47N60C
RFQ
VIEW
RFQ
2,910
In-stock
IXYS MOSFET N-CH 600V 47A TO-247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247AD (IXKH) - N-Channel Super Junction 600V 47A (Tc) 70 mOhm @ 30A, 10V 4V @ 2mA 650nC @ 10V - 10V ±20V
APT36N90BC3G
RFQ
VIEW
RFQ
3,467
In-stock
Microsemi Corporation MOSFET N-CH 900V 36A TO-247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247 [B] 390W (Tc) N-Channel Super Junction 900V 36A (Tc) 120 mOhm @ 18A, 10V 3.5V @ 2.9mA 252nC @ 10V 7463pF @ 25V 10V ±20V
IXKH70N60C5
RFQ
VIEW
RFQ
3,299
In-stock
IXYS MOSFET N-CH 600V 70A TO247AD CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247AD (IXKH) - N-Channel Super Junction 600V 70A (Tc) 45 mOhm @ 44A, 10V 3.5V @ 3mA 190nC @ 10V 6800pF @ 100V 10V ±20V
TK39N60X,S1F
RFQ
VIEW
RFQ
1,552
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 38.8A TO-247 DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247 270W (Tc) N-Channel Super Junction 600V 38.8A (Ta) 65 mOhm @ 12.5A, 10V 3.5V @ 1.9mA 85nC @ 10V 4100pF @ 300V 10V ±30V
TK31N60X,S1F
RFQ
VIEW
RFQ
1,680
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 30.8A TO-247 DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247 230W (Tc) N-Channel Super Junction 600V 30.8A (Ta) 88 mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65nC @ 10V 3000pF @ 300V 10V ±30V
TK62N60X,S1F
RFQ
VIEW
RFQ
3,286
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 61.8A TO-247 DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247 400W (Tc) N-Channel Super Junction 600V 61.8A (Ta) 40 mOhm @ 21A, 10V 3.5V @ 3.1mA 135nC @ 10V 6500pF @ 300V 10V ±30V
TK62N60W,S1VF
RFQ
VIEW
RFQ
1,714
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 61.8A TO-247 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247 400W (Tc) N-Channel Super Junction 600V 61.8A (Ta) 40 mOhm @ 30.9A, 10V 3.7V @ 3.1mA 180nC @ 10V 6500pF @ 300V 10V ±30V
TK39N60W,S1VF
RFQ
VIEW
RFQ
2,488
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 600V 38.8A TO247 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247 270W (Tc) N-Channel Super Junction 600V 38.8A (Ta) 65 mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110nC @ 10V 4100pF @ 300V 10V ±30V
FCH023N65S3-F155
RFQ
VIEW
RFQ
2,028
In-stock
ON Semiconductor MOSFET N-CH 650V 75A TO247 SuperFET® III Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247 Long Leads 595W (Tc) N-Channel Super Junction 650V 75A (Tc) 23 mOhm @ 37.5A, 10V 4.5V @ 7.5mA 222nC @ 10V 7160pF @ 400V 10V ±30V
IPW80R280P7XKSA1
RFQ
VIEW
RFQ
3,119
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Infineon Technologies MOSFET N-CH 800V 17A TO247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 101W (Tc) N-Channel Super Junction 800V 17A (Tc) 280 mOhm @ 7.2A, 10V 3.5V @ 360µA 10nC @ 10V 1200pF @ 500V 10V ±20V