Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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C2M0080120D
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1,535
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Cree/Wolfspeed MOSFET N-CH 1200V 31.6A TO247 C2M™ Active Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 192W (Tc) N-Channel - 1200V 36A (Tc) 98 mOhm @ 20A, 20V 4V @ 5mA 62nC @ 5V 950pF @ 1000V 20V +25V, -10V
STW20NM60
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3,279
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STMicroelectronics MOSFET N-CH 600V 20A TO-247 MDmesh™ Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 192W (Tc) N-Channel - 600V 20A (Tc) 290 mOhm @ 10A, 10V 5V @ 250µA 54nC @ 10V 1500pF @ 25V 10V ±30V
IPW60R165CPFKSA1
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RFQ
1,576
In-stock
Infineon Technologies MOSFET N-CH 600V 21A TO-247 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 192W (Tc) N-Channel - 600V 21A (Tc) 165 mOhm @ 12A, 10V 3.5V @ 790µA 52nC @ 10V 2000pF @ 100V 10V ±20V
IPW50R140CPFKSA1
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RFQ
2,298
In-stock
Infineon Technologies MOSFET N-CH 550V 23A TO-247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 192W (Tc) N-Channel - 550V 23A (Tc) 140 mOhm @ 14A, 10V 3.5V @ 930µA 64nC @ 10V 2540pF @ 100V 10V ±20V