- Manufacture :
- Operating Temperature :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,287
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
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VIEW |
1,970
In-stock
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STMicroelectronics | N-CHANNEL 900 V, 0.60 OHM TYP., | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 130W (Tc) | N-Channel | - | 900V | 8A (Tc) | - | 5V @ 100µA | - | - | 10V | ±30V | |||
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VIEW |
1,701
In-stock
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STMicroelectronics | MOSFET N-CH 650V 18A TO247 | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 130W (Tc) | N-Channel | - | 650V | 18A (Tc) | 190 mOhm @ 9A, 10V | 5V @ 250µA | 45nC @ 10V | 1345pF @ 100V | 10V | ±25V | |||
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VIEW |
2,612
In-stock
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STMicroelectronics | MOSFET N-CH 1050V 6A TO-247 | SuperMESH5™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 130W (Tc) | N-Channel | - | 1050V | 6A (Tc) | 1.3 Ohm @ 3A, 10V | 5V @ 100µA | 21.5nC @ 10V | 545pF @ 100V | 10V | 30V | |||
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VIEW |
1,871
In-stock
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STMicroelectronics | MOSFET N-CH 950V 8A TO-247 | SuperMESH5™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 130W (Tc) | N-Channel | - | 950V | 8A (Tc) | 800 mOhm @ 4A, 10V | 5V @ 100µA | 22nC @ 10V | 630pF @ 100V | 10V | ±30V | |||
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VIEW |
3,671
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
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VIEW |
2,587
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
