Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
C3M0120090D
RFQ
VIEW
RFQ
2,601
In-stock
Cree/Wolfspeed 900V, 120 MOHM, G3 SIC MOSFET C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 97W (Tc) N-Channel - 900V 23A (Tc) 155 mOhm @ 15A, 15V 3.5V @ 3mA 17.3nC @ 15V 350pF @ 600V 15V +18V, -8V