- Part Status :
- Operating Temperature :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.38 Ohm @ 4.15A, 10V (1)
- 110 mOhm @ 13.8A, 10V (1)
- 14 mOhm @ 54A, 10V (2)
- 3.3 mOhm @ 100A, 10V (1)
- 360 mOhm @ 8A, 10V (1)
- 55 mOhm @ 25A, 10V (2)
- 650 mOhm @ 6A, 10V (1)
- 88 mOhm @ 15.4A, 10V (1)
- 88 mOhm @ 9.4A, 10V (1)
- 880 mOhm @ 5.5A, 10V (1)
- 9 mOhm @ 58A, 10V (1)
- 900 mOhm @ 5A, 10V (1)
- 99 mOhm @ 15.4A, 10V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
15 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
2,789
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 12A TO-247 | SuperMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 230W (Tc) | N-Channel | - | 800V | 12A (Tc) | 650 mOhm @ 6A, 10V | 4.5V @ 100µA | 155nC @ 10V | 3480pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
3,917
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 16A TO-247 | SuperMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 230W (Tc) | N-Channel | - | 600V | 16A (Tc) | 360 mOhm @ 8A, 10V | 4.5V @ 100µA | 170nC @ 10V | 3540pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,159
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 97A TO-247AC | HEXFET® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | |||
|
VIEW |
1,355
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 30.8A TO247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247 | 230W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 88 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
VIEW |
770
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 70A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 230W (Tc) | N-Channel | - | 60V | 70A (Tc) | 14 mOhm @ 54A, 10V | 4V @ 250µA | 160nC @ 10V | 4500pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,687
In-stock
|
Infineon Technologies | MOSFET N CH 60V 172A TO247 | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | 230W (Tc) | N-Channel | - | 60V | 172A (Tc) | 3.3 mOhm @ 100A, 10V | 3.7V @ 150µA | 210nC @ 10V | 7020pF @ 25V | 6V, 10V | ±20V | |||
|
|
VIEW |
3,389
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 41A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 230W (Tc) | N-Channel | - | 100V | 41A (Tc) | 55 mOhm @ 25A, 10V | 4V @ 250µA | 140nC @ 10V | 2800pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,062
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 70A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 230W (Tc) | N-Channel | - | 60V | 70A (Tc) | 14 mOhm @ 54A, 10V | 4V @ 250µA | 160nC @ 10V | 4500pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,680
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-247 | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247 | 230W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 88 mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,152
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 27.6A TO247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247 | 230W (Tc) | N-Channel | - | 650V | 27.6A (Ta) | 110 mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,656
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247 | 230W (Tc) | N-Channel | - | 600V | 30.8A (Ta) | 99 mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,579
In-stock
|
STMicroelectronics | MOSFET N-CH 950V 10A TO-247 | SuperMESH™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 230W (Tc) | N-Channel | - | 950V | 10A (Tc) | 900 mOhm @ 5A, 10V | 4.5V @ 100µA | 113nC @ 10V | 3500pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,214
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 41A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 230W (Tc) | N-Channel | - | 100V | 41A (Tc) | 55 mOhm @ 25A, 10V | 4V @ 250µA | 140nC @ 10V | 2800pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,272
In-stock
|
STMicroelectronics | MOSFET N-CH 900V 11A TO-247 | SuperMESH™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 230W (Tc) | N-Channel | - | 900V | 11A (Tc) | 880 mOhm @ 5.5A, 10V | 4.5V @ 100µA | 152nC @ 10V | 3500pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
1,013
In-stock
|
STMicroelectronics | MOSFET N-CH 1KV 8.3A TO-247 | SuperMESH™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 230W (Tc) | N-Channel | - | 1000V | 8.3A (Tc) | 1.38 Ohm @ 4.15A, 10V | 4.5V @ 100µA | 162nC @ 10V | 3500pF @ 25V | 10V | ±30V | |||
