- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
606
In-stock
|
STMicroelectronics | MOSFET N-CH 1200V 65A HIP247 | - | Active | - | SiCFET (Silicon Carbide) | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | HiP247™ | 318W (Tc) | N-Channel | 1200V | 65A (Tc) | 69 mOhm @ 40A, 20V | 3V @ 1mA | 122nC @ 20V | 1900pF @ 400V | 20V | +25V, -10V | ||||
VIEW |
2,581
In-stock
|
STMicroelectronics | MOSFET N-CH 1.2KV TO247-3 | - | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | HiP247™ | 318W (Tc) | N-Channel | 1200V | 65A (Tc) | 69 mOhm @ 40A, 20V | 3V @ 1mA | 122nC @ 20V | 1900pF @ 400V | 20V | +25V, -10V | ||||
VIEW |
1,824
In-stock
|
STMicroelectronics | MOSFET N-CH 1200V 45A HIP247 | - | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | HiP247™ | 270W (Tc) | N-Channel | 1200V | 40A (Tc) | 100 mOhm @ 20A, 20V | 2.6V @ 1mA (Typ) | 105nC @ 20V | 1700pF @ 400V | 20V | +25V, -10V | ||||
VIEW |
2,775
In-stock
|
STMicroelectronics | MOSFET N-CH 1200V 20A HIP247 | - | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | HiP247™ | 175W (Tc) | N-Channel | 1200V | 20A (Tc) | 290 mOhm @ 10A, 20V | 3.5V @ 1mA | 45nC @ 20V | 650pF @ 400V | 20V | +25V, -10V | ||||
VIEW |
3,118
In-stock
|
STMicroelectronics | MOSFET N-CH 1.2KV TO247-3 | - | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | HiP247™ | 150W (Tc) | N-Channel | 1200V | 12A (Tc) | 690 mOhm @ 6A, 20V | 3.5V @ 250µA | 22nC @ 20V | 290pF @ 400V | 20V | +25V, -10V |