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- Package / Case :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,660
In-stock
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Infineon Technologies | MOSFET N-CH 55V 25A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 50W (Tc) | N-Channel | 55V | 25A (Tc) | 21.6 mOhm @ 17A, 10V | 2.2V @ 20µA | 47nC @ 10V | 2260pF @ 25V | 5V, 10V | ±16V | |||
|
VIEW |
1,365
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 25A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 50W (Tc) | N-Channel | 55V | 25A (Tc) | 21.6 mOhm @ 17A, 10V | 2.2V @ 20µA | 47nC @ 10V | 2260pF @ 25V | 5V, 10V | ±16V | |||
|
VIEW |
3,057
In-stock
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Infineon Technologies | MOSFET N-CH 150V 41A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,836
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 14A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 200W (Tc) | N-Channel | 500V | 14A (Tc) | 370 mOhm @ 8.4A, 10V | 5V @ 250µA | 77nC @ 10V | 2260pF @ 25V | 10V | ±30V | |||
