Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
2SK4150TZ-E
RFQ
VIEW
RFQ
2,942
In-stock
Renesas Electronics America MOSFET N-CH 250V 0.4A TO-92 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92 750mW (Ta) N-Channel 250V 400mA (Ta) 5.7 Ohm @ 200mA, 4V - 3.7nC @ 4V 80pF @ 25V 2.5V, 4V ±10V
BS270-D74Z
RFQ
VIEW
RFQ
1,015
In-stock
ON Semiconductor MOSFET N-CH 60V 400MA TO-92 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 625mW (Ta) N-Channel 60V 400mA (Ta) 2 Ohm @ 500mA, 10V 2.5V @ 250µA - 50pF @ 25V 4.5V, 10V ±20V
BS270-D74Z
RFQ
VIEW
RFQ
1,749
In-stock
ON Semiconductor MOSFET N-CH 60V 400MA TO-92 - Active Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 625mW (Ta) N-Channel 60V 400mA (Ta) 2 Ohm @ 500mA, 10V 2.5V @ 250µA - 50pF @ 25V 4.5V, 10V ±20V
IRFD9210PBF
RFQ
VIEW
RFQ
1,495
In-stock
Vishay Siliconix MOSFET P-CH 200V 0.4A 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Ta) P-Channel 200V 400mA (Ta) 3 Ohm @ 240mA, 10V 4V @ 250µA 8.9nC @ 10V 170pF @ 25V 10V ±20V
BS270
RFQ
VIEW
RFQ
3,494
In-stock
ON Semiconductor MOSFET N-CH 60V 400MA TO-92 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92-3 625mW (Ta) N-Channel 60V 400mA (Ta) 2 Ohm @ 500mA, 10V 2.5V @ 250µA - 50pF @ 25V 4.5V, 10V ±20V