Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK46E08N1,S1X
RFQ
VIEW
RFQ
2,563
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 80V 80A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 103W (Tc) N-Channel - 80V 80A (Tc) 8.4 mOhm @ 23A, 10V 4V @ 500µA 37nC @ 10V 2500pF @ 40V 10V ±20V
TK46A08N1,S4X
RFQ
VIEW
RFQ
2,606
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 80V 46A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 80V 46A (Tc) 8.4 mOhm @ 23A, 10V 4V @ 500µA 37nC @ 10V 2500pF @ 40V 10V ±20V
TK34A10N1,S4X
RFQ
VIEW
RFQ
746
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 34A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 100V 34A (Tc) 9.5 mOhm @ 17A, 10V 4V @ 500µA 38nC @ 10V 2600pF @ 50V 10V ±20V
TK34E10N1,S1X
RFQ
VIEW
RFQ
2,123
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 75A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 103W (Tc) N-Channel - 100V 75A (Tc) 9.5 mOhm @ 17A, 10V 4V @ 500µA 38nC @ 10V 2600pF @ 50V 10V ±20V
TK32E12N1,S1X
RFQ
VIEW
RFQ
1,601
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 120V 60A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 98W (Tc) N-Channel - 120V 60A (Tc) 13.8 mOhm @ 16A, 10V 4V @ 500µA 34nC @ 10V 2000pF @ 60V 10V ±20V
TK32A12N1,S4X
RFQ
VIEW
RFQ
3,098
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 120V 32A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 120V 32A (Tc) 13.8 mOhm @ 16A, 10V 4V @ 500µA 34nC @ 10V 2000pF @ 60V 10V ±20V
TK58A06N1,S4X
RFQ
VIEW
RFQ
1,486
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 58A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 60V 58A (Tc) 5.4 mOhm @ 29A, 10V 4V @ 500µA 46nC @ 10V 3400pF @ 30V 10V ±20V
TK58E06N1,S1X
RFQ
VIEW
RFQ
2,779
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 58A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 110W (Tc) N-Channel - 60V 58A (Ta) 5.4 mOhm @ 29A, 10V 4V @ 500µA 46nC @ 10V 3400pF @ 30V 10V ±20V
TK40A10N1,S4X
RFQ
VIEW
RFQ
3,756
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 40A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 100V 40A (Tc) 8.2 mOhm @ 20A, 10V 4V @ 500µA 49nC @ 10V 3000pF @ 50V 10V ±20V
TK40E10N1,S1X
RFQ
VIEW
RFQ
1,761
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 100V 90A TO220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 126W (Tc) N-Channel - 100V 90A (Tc) 8.2 mOhm @ 20A, 10V 4V @ 500µA 49nC @ 10V 3000pF @ 50V 10V ±20V