Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TK58A06N1,S4X
RFQ
VIEW
RFQ
1,486
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 58A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 60V 58A (Tc) 5.4 mOhm @ 29A, 10V 4V @ 500µA 46nC @ 10V 3400pF @ 30V 10V ±20V
TK58E06N1,S1X
RFQ
VIEW
RFQ
2,779
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 58A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 110W (Tc) N-Channel - 60V 58A (Ta) 5.4 mOhm @ 29A, 10V 4V @ 500µA 46nC @ 10V 3400pF @ 30V 10V ±20V
TK30E06N1,S1X
RFQ
VIEW
RFQ
1,839
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 43A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 53W (Tc) N-Channel - 60V 43A (Ta) 15 mOhm @ 15A, 10V 4V @ 200µA 16nC @ 10V 1050pF @ 30V 10V ±20V
TK40E06N1,S1X
RFQ
VIEW
RFQ
3,209
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 40A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 67W (Tc) N-Channel - 60V 40A (Ta) 10.4 mOhm @ 20A, 10V 4V @ 300µA 23nC @ 10V 1700pF @ 30V 10V ±20V
TK40A06N1,S4X
RFQ
VIEW
RFQ
870
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 60A TO220SIS U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 60V 40A (Tc) 10.4 mOhm @ 20A, 10V 4V @ 300µA 23nC @ 10V 1700pF @ 30V 10V ±20V
TK30A06N1,S4X
RFQ
VIEW
RFQ
2,995
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 30A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 25W (Tc) N-Channel - 60V 30A (Tc) 15 mOhm @ 15A, 10V 4V @ 200µA 16nC @ 10V 1050pF @ 30V 10V ±20V
TK100A06N1,S4X
RFQ
VIEW
RFQ
2,564
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 100A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 60V 100A (Tc) 2.7 mOhm @ 50A, 10V 4V @ 1mA 140nC @ 10V 10500pF @ 30V 10V ±20V
TK100E06N1,S1X
RFQ
VIEW
RFQ
1,498
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 100A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 255W (Tc) N-Channel - 60V 100A (Ta) 2.3 mOhm @ 50A, 10V 4V @ 1mA 140nC @ 10V 10500pF @ 30V 10V ±20V