- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
3,311
In-stock
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Infineon Technologies | MOSFET P-CH 100V 15A TO220-3 | SIPMOS® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 128W (Tc) | P-Channel | - | 100V | 15A (Tc) | 240 mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48nC @ 10V | 1280pF @ 25V | 10V | ±20V | ||||
VIEW |
997
In-stock
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Infineon Technologies | MOSFET N-CH 200V 21A TO220-3 | SIPMOS® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 125W (Tc) | N-Channel | - | 200V | 21A (Tc) | 130 mOhm @ 13.5A, 10V | 4V @ 1mA | - | 1900pF @ 25V | 10V | ±20V | ||||
VIEW |
1,757
In-stock
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Infineon Technologies | MOSFET P-CH 60V 8.8A TO-220 | SIPMOS® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 42W (Tc) | P-Channel | - | 60V | 8.8A (Tc) | 300 mOhm @ 6.2A, 10V | 4V @ 250µA | 15nC @ 10V | 420pF @ 25V | 10V | ±20V | ||||
VIEW |
1,573
In-stock
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Infineon Technologies | MOSFET P-CH 60V 18.7A TO-220 | SIPMOS® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 81.1W (Ta) | P-Channel | - | 60V | 18.7A (Ta) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | 10V | ±20V | ||||
VIEW |
3,636
In-stock
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Infineon Technologies | MOSFET P-CH 60V 80A TO-220 | SIPMOS® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 340W (Tc) | P-Channel | - | 60V | 80A (Tc) | 23 mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | 5033pF @ 25V | 10V | ±20V | ||||
VIEW |
3,857
In-stock
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Infineon Technologies | MOSFET P-CH 100V 15A TO220-3 | SIPMOS® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 128W (Tc) | P-Channel | - | 100V | 15A (Tc) | 200 mOhm @ 11.3A, 10V | 2V @ 1.54mA | 62nC @ 10V | 1490pF @ 25V | 4.5V, 10V | ±20V |