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- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
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10 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,593
In-stock
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ON Semiconductor | MOSFET P-CH 500V 2.7A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 85W (Tc) | P-Channel | - | 500V | 2.7A (Tc) | 4.9 Ohm @ 1.35A, 10V | 5V @ 250µA | 23nC @ 10V | 660pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,561
In-stock
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ON Semiconductor | MOSFET P-CH 500V 1.9A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 39W (Tc) | P-Channel | - | 500V | 1.9A (Tc) | 4.9 Ohm @ 950mA, 10V | 5V @ 250µA | 23nC @ 10V | 660pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,827
In-stock
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ON Semiconductor | MOSFET P-CH 500V 2.1A IPAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 50W (Tc) | P-Channel | - | 500V | 2.1A (Tc) | 4.9 Ohm @ 1.05A, 10V | 5V @ 250µA | 23nC @ 10V | 660pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,415
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 3.6A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 74W (Tc) | N-Channel | - | 600V | 3.6A (Tc) | 2.2 Ohm @ 2.2A, 10V | 4V @ 250µA | 31nC @ 10V | 660pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,967
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 3.6A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 74W (Tc) | N-Channel | - | 600V | 3.6A (Tc) | 2.2 Ohm @ 2.2A, 10V | 4V @ 250µA | 31nC @ 10V | 660pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,103
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 3.6A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 3.1W (Ta), 74W (Tc) | N-Channel | - | 600V | 3.6A (Tc) | 2.2 Ohm @ 2.2A, 10V | 4V @ 250µA | 31nC @ 10V | 660pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,950
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 2.5A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 35W (Tc) | N-Channel | - | 600V | 2.5A (Tc) | 2.2 Ohm @ 1.5A, 10V | 4V @ 250µA | 31nC @ 10V | 660pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,738
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 3.6A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 74W (Tc) | N-Channel | - | 600V | 3.6A (Tc) | 2.2 Ohm @ 2.2A, 10V | 4V @ 250µA | 31nC @ 10V | 660pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,798
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 2.5A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 35W (Tc) | N-Channel | - | 600V | 2.5A (Tc) | 2.2 Ohm @ 1.5A, 10V | 4V @ 250µA | 31nC @ 10V | 660pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,619
In-stock
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ON Semiconductor | MOSFET P-CH 500V 2.7A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 85W (Tc) | P-Channel | - | 500V | 2.7A (Tc) | 4.9 Ohm @ 1.35A, 10V | 5V @ 250µA | 23nC @ 10V | 660pF @ 25V | 10V | ±30V |