- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,160
In-stock
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Microsemi Corporation | MOSFET N-CH 1200V 18A T-MAX | POWER MOS 7® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 565W (Tc) | N-Channel | - | 1200V | 18A (Tc) | 670 mOhm @ 9A, 10V | 5V @ 2.5mA | 150nC @ 10V | 4420pF @ 25V | 10V | ±30V | |||
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VIEW |
3,016
In-stock
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Microsemi Corporation | MOSFET N-CH 650V 95A T-MAX | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 833W (Tc) | N-Channel | Super Junction | 650V | 95A (Tc) | 35 mOhm @ 35.2A, 10V | 3.5V @ 3.5mA | 320nC @ 10V | 8140pF @ 25V | 10V | ±20V |