Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Microsemi Corporation N CHANNEL MOSFET TO-257 RAD Military, MIL-PRF-19500/614 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-257-3 TO-257 2W (Ta), 75W (Tc) N-Channel 200V 9.4A (Tc) 490 mOhm @ 9.4A, 12V 4V @ 1mA 50nC @ 12V - 12V ±20V
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Microsemi Corporation N CHANNEL MOSFET TO-257 RAD Military, MIL-PRF-19500/614 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-257-3 TO-257 2W (Ta), 75W (Tc) N-Channel 100V 14.4A (Tc) 200 mOhm @ 14.4A, 12V 4V @ 1mA 40nC @ 12V - 12V ±20V
APL602LG
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841
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Microsemi Corporation MOSFET N-CH 600V 49A TO-264 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 [L] 730W (Tc) N-Channel 600V 49A (Tc) 125 mOhm @ 24.5A, 12V 4V @ 2.5mA - 9000pF @ 25V 12V ±30V
APL602B2G
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3,503
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Microsemi Corporation MOSFET N-CH 600V 49A T-MAX - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 730W (Tc) N-Channel 600V 49A (Tc) 125 mOhm @ 24.5A, 12V 4V @ 2.5mA - 9000pF @ 25V 12V ±30V