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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,217
In-stock
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STMicroelectronics | MOSFET N-CH 520V 4.4A TO-220 | SuperMESH™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 25W (Tc) | N-Channel | - | 520V | 4.4A (Tc) | 1.5 Ohm @ 2.2A, 10V | 4.5V @ 50µA | 16.9nC @ 10V | 529pF @ 25V | 10V | ±30V | ||||
VIEW |
3,348
In-stock
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Infineon Technologies | MOSFET N-CH 650V 1.8A IPAK | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 25W (Tc) | N-Channel | - | 650V | 1.8A (Tc) | 3 Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5nC @ 10V | 200pF @ 25V | 10V | ±20V |