- Manufacture :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,494
In-stock
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ON Semiconductor | MOSFET P-CH 200V 11A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 98W (Tc) | P-Channel | 200V | 11A (Tc) | 500 mOhm @ 5.5A, 5V | 2V @ 250µA | 59nC @ 5V | 1585pF @ 25V | 5V | ±20V | |||
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VIEW |
1,720
In-stock
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ON Semiconductor | MOSFET P-CH 200V 11A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 123W (Tc) | P-Channel | 200V | 11A (Tc) | 500 mOhm @ 5.5A, 10V | 4V @ 250µA | 59nC @ 10V | 1585pF @ 25V | 10V | ±30V | |||
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VIEW |
1,269
In-stock
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ON Semiconductor | MOSFET P-CH 200V 11A TO-3P | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 126W (Tc) | P-Channel | 200V | 11A (Tc) | 500 mOhm @ 5.5A, 10V | 4V @ 250µA | 59nC @ 10V | 1585pF @ 25V | 10V | ±30V | |||
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VIEW |
2,187
In-stock
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Microsemi Corporation | MOSFET N-CH 800V 11A TO-247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 156W (Tc) | N-Channel | 800V | 11A (Tc) | 450 mOhm @ 7.1A, 10V | 3.9V @ 680µA | 60nC @ 10V | 1585pF @ 25V | 10V | ±20V |