Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TSM80N950CI C0G
RFQ
VIEW
RFQ
3,125
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 800V 6A ITO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 25W (Tc) N-Channel 800V 6A (Tc) 950 mOhm @ 2A, 10V 4V @ 250µA 19.6nC @ 10V 691pF @ 100V 10V ±30V
TSM80N950CH C5G
RFQ
VIEW
RFQ
950
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 800V 6A TO251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (IPAK) 110W (Tc) N-Channel 800V 6A (Tc) 950 mOhm @ 3A, 10V 4V @ 250µA 19.6nC @ 10V 691pF @ 100V 10V ±30V