- Manufacture :
- Series :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,160
In-stock
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Microsemi Corporation | MOSFET N-CH 1200V 18A T-MAX | POWER MOS 7® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 565W (Tc) | N-Channel | 1200V | 18A (Tc) | 670 mOhm @ 9A, 10V | 5V @ 2.5mA | 150nC @ 10V | 4420pF @ 25V | 10V | ±30V | |||
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VIEW |
3,998
In-stock
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Microsemi Corporation | MOSFET N-CH 1200V 18A T-MAX | POWER MOS 7® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 565W (Tc) | N-Channel | 1200V | 18A (Tc) | 670 mOhm @ 9A, 10V | 5V @ 2.5mA | 150nC @ 10V | 4420pF @ 25V | 10V | ±30V | |||
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VIEW |
1,227
In-stock
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IXYS | MOSFET N-CH 650V 48A TO-247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 660W (Tc) | N-Channel | 650V | 48A (Tc) | 68 mOhm @ 24A, 10V | 4.5V @ 4mA | 77nC @ 10V | 4420pF @ 25V | 10V | ±30V | |||
