Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPP80R1K2P7XKSA1
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640
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Infineon Technologies MOSFET N-CH 800V 4.5A TO220-3 CoolMOS™ P7 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3 37W (Tc) N-Channel - 800V 4.5A (Tc) 1.2 Ohm @ 1.7A, 10V 3.5V @ 80µA 11nC @ 10V 300pF @ 500V 10V ±20V
IPA80R1K2P7XKSA1
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696
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Infineon Technologies MOSFET N-CH 800V 4.5A TO220 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 25W (Tc) N-Channel - 800V 4.5A (Tc) 1.2 Ohm @ 1.7A, 10V 3.5V @ 80µA 11nC @ 10V 300pF @ 500V 10V ±20V
IPS80R1K2P7AKMA1
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RFQ
1,957
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Infineon Technologies MOSFET N-CH 800V 4.5A TO251-3 CoolMOS™ P7 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 37W (Tc) N-Channel - 800V 4.5A (Tc) 1.2 Ohm @ 1.7A, 10V 3.5V @ 80µA 11nC @ 10V 300pF @ 500V 10V ±20V
IPU80R1K2P7AKMA1
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RFQ
1,942
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Infineon Technologies MOSFET N-CH 800V 4.5A TO251-3 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 37W (Tc) N-Channel - 800V 4.5A (Tc) 1.2 Ohm @ 1.7A, 10V 3.5V @ 80µA 11nC @ 10V 300pF @ 500V 10V ±20V