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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF840AL	RFQ VIEW	PDF RFQ	3,310 In-stock	Vishay Siliconix	MOSFET N-CH 500V 8A TO-262		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	3.1W (Ta), 125W (Tc)	N-Channel	500V	8A (Tc)	850 mOhm @ 4.8A, 10V	4V @ 250µA	38nC @ 10V	1018pF @ 25V	10V	±30V
	IRF840APBF	RFQ VIEW	PDF RFQ	3,562 In-stock	Vishay Siliconix	MOSFET N-CH 500V 8A TO-220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	125W (Tc)	N-Channel	500V	8A (Tc)	850 mOhm @ 4.8A, 10V	4V @ 250µA	38nC @ 10V	1018pF @ 25V	10V	±30V
	IRF840A	RFQ VIEW	PDF RFQ	3,162 In-stock	Vishay Siliconix	MOSFET N-CH 500V 8A TO-220AB		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	125W (Tc)	N-Channel	500V	8A (Tc)	850 mOhm @ 4.8A, 10V	4V @ 250µA	38nC @ 10V	1018pF @ 25V	10V	±30V
	IRF840ALPBF	RFQ VIEW	PDF RFQ	1,266 In-stock	Vishay Siliconix	MOSFET N-CH 500V 8A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	3.1W (Ta), 125W (Tc)	N-Channel	500V	8A (Tc)	850 mOhm @ 4.8A, 10V	4V @ 250µA	38nC @ 10V	1018pF @ 25V	10V	±30V

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