Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PHX23NQ11T,127
RFQ
VIEW
RFQ
3,210
In-stock
NXP USA Inc. MOSFET N-CH 110V 16A SOT186A TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 41.6W (Tc) N-Channel 110V 16A (Tc) 70 mOhm @ 13A, 10V 4V @ 1mA 22nC @ 10V 830pF @ 25V 10V ±20V
FQU10N20LTU
RFQ
VIEW
RFQ
1,496
In-stock
ON Semiconductor MOSFET N-CH 200V 7.6A IPAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 2.5W (Ta), 51W (Tc) N-Channel 200V 7.6A (Tc) 360 mOhm @ 3.8A, 10V 2V @ 250µA 17nC @ 5V 830pF @ 25V 5V, 10V ±20V
AOT3N100
RFQ
VIEW
RFQ
733
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 1000V 2.8A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 132W (Tc) N-Channel 1000V 2.8A (Tc) 6 Ohm @ 1.5A, 10V 4.5V @ 250µA 20nC @ 10V 830pF @ 25V 10V ±30V
AOTF3N100
RFQ
VIEW
RFQ
1,014
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 1000V 2.8A TO220F - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3F 38W (Tc) N-Channel 1000V 2.8A (Tc) 6 Ohm @ 1.5A, 10V 4.5V @ 250µA 20nC @ 10V 830pF @ 25V 10V ±30V