Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM1N45CT B0G
RFQ
VIEW
RFQ
1,133
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 450V 500MA TO92 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92 2W (Tc) N-Channel 450V 500mA (Tc) 4.25 Ohm @ 250mA, 10V 4.25V @ 250µA 6.5nC @ 10V 235pF @ 25V 10V ±30V
FQU2N60CTU
RFQ
VIEW
RFQ
1,508
In-stock
ON Semiconductor MOSFET N-CH 600V 1.9A IPAK QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 2.5W (Ta), 44W (Tc) N-Channel 600V 1.9A (Tc) 4.7 Ohm @ 950mA, 10V 4V @ 250µA 12nC @ 10V 235pF @ 25V 10V ±30V
FQP2N60C
RFQ
VIEW
RFQ
1,872
In-stock
ON Semiconductor MOSFET N-CH 600V 2A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 54W (Tc) N-Channel 600V 2A (Tc) 4.7 Ohm @ 1A, 10V 4V @ 250µA 12nC @ 10V 235pF @ 25V 10V ±30V
IRLU110ATU
RFQ
VIEW
RFQ
3,262
In-stock
ON Semiconductor MOSFET N-CH 100V 4.7A I-PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 2.5W (Ta), 22W (Tc) N-Channel 100V 4.7A (Tc) 440 mOhm @ 2.35A, 5V 2V @ 250µA 8nC @ 5V 235pF @ 25V 5V ±20V
FQPF2N60C
RFQ
VIEW
RFQ
1,532
In-stock
ON Semiconductor MOSFET N-CH 600V 2A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 23W (Tc) N-Channel 600V 2A (Tc) 4.7 Ohm @ 1A, 10V 4V @ 250µA 12nC @ 10V 235pF @ 25V 10V ±30V
TSM1N45CT A3G
RFQ
VIEW
RFQ
3,845
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 450V 500MA TO92 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92 2W (Tc) N-Channel 450V 500mA (Tc) 4.25 Ohm @ 250mA, 10V 4.25V @ 250µA 6.5nC @ 10V 235pF @ 25V 10V ±30V
TSM1N45CT A3G
RFQ
VIEW
RFQ
3,966
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 450V 500MA TO92 - Active Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92 2W (Tc) N-Channel 450V 500mA (Tc) 4.25 Ohm @ 250mA, 10V 4.25V @ 250µA 6.5nC @ 10V 235pF @ 25V 10V ±30V