Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFB170N30P
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3,049
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IXYS MOSFET N-CH TO-264 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 1250W (Tc) N-Channel - 300V 170A (Tc) 18 mOhm @ 85A, 10V 4.5V @ 1mA 258nC @ 10V 20000pF @ 25V 10V ±20V
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RFQ
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RFQ
1,745
In-stock
IXYS MOSFET N-CH 500V 70A ISOPLUS264 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS264™ ISOPLUS264™ 625W (Tc) N-Channel - 500V 70A (Tc) 52 mOhm @ 50A, 10V 5V @ 8mA 240nC @ 10V 20000pF @ 25V 10V ±30V
IXFK120N30T
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RFQ
3,936
In-stock
IXYS MOSFET N-CH 300V 120A TO-264 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 960W (Tc) N-Channel - 300V 120A (Tc) 24 mOhm @ 60A, 10V 5V @ 4mA 265nC @ 10V 20000pF @ 25V 10V ±20V
IXFX120N30T
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RFQ
668
In-stock
IXYS MOSFET N-CH 300V 120A PLUS247 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 960W (Tc) N-Channel - 300V 120A (Tc) 24 mOhm @ 60A, 10V 5V @ 4mA 265nC @ 10V 20000pF @ 25V 10V ±20V