Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXTH3N150
RFQ
VIEW
RFQ
3,312
In-stock
IXYS MOSFET N-CH 1500V 3A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 250W (Tc) N-Channel 1500V 3A (Tc) 7.3 Ohm @ 1.5A, 10V 5V @ 250µA 38.6nC @ 10V 1375pF @ 25V 10V ±30V
SIHF12N50C-E3
RFQ
VIEW
RFQ
1,373
In-stock
Vishay Siliconix MOSFET N-CH 500V 12A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 36W (Tc) N-Channel 500V 12A (Tc) 555 mOhm @ 4A, 10V 5V @ 250µA 48nC @ 10V 1375pF @ 25V 10V ±30V
SIHP12N50C-E3
RFQ
VIEW
RFQ
791
In-stock
Vishay Siliconix MOSFET N-CH 500V 12A TO-220AB - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 - 208W (Tc) N-Channel 500V 12A (Tc) 555 mOhm @ 4A, 10V 5V @ 250µA 48nC @ 10V 1375pF @ 25V 10V ±30V