Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPW60R099P7XKSA1
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Infineon Technologies MOSFET N-CH 600V 31A TO247-3 CoolMOS™ P7 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 117W (Tc) N-Channel 600V 31A (Tc) 99 mOhm @ 10.5A, 10V 4V @ 530µA 45nC @ 10V 1952pF @ 400V 10V ±20V
IPP60R099P7XKSA1
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Infineon Technologies MOSFET N-CH 600V 31A TO220-3 CoolMOS™ P7 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3 117W (Tc) N-Channel 600V 31A (Tc) 99 mOhm @ 10.5A, 10V 4V @ 530µA 45nC @ 10V 1952pF @ 400V 10V ±20V
IPZA60R099P7XKSA1
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Infineon Technologies MOSFET TO247-4 CoolMOS™ P7 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-4 PG-TO247-4 117W (Tc) N-Channel 600V 31A (Tc) 99 mOhm @ 10.5A, 10V 4V @ 530µA 45nC @ 10V 1952pF @ 400V 10V ±20V
IPA60R099P7XKSA1
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Infineon Technologies MOSFET N-CHANNEL 600V 31A TO220 CoolMOS™ P7 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 29W (Tc) N-Channel 600V 31A (Tc) 99 mOhm @ 10.5A, 10V 4V @ 530µA 45nC @ 10V 1952pF @ 400V 10V ±20V