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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	APT8075BN	RFQ VIEW	PDF RFQ	3,597 In-stock	Microsemi Corporation	MOSFET N-CH 800V 13A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	310W (Tc)	N-Channel	-	800V	13A (Tc)	750 mOhm @ 6.5A, 10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	10V	±30V
	APT6040BNG	RFQ VIEW	PDF RFQ	2,802 In-stock	Microsemi Corporation	MOSFET N-CH 600V 18A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	310W (Tc)	N-Channel	-	600V	18A (Tc)	400 mOhm @ 9A, 10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	10V	±30V
	APT6040BN	RFQ VIEW	PDF RFQ	3,035 In-stock	Microsemi Corporation	MOSFET N-CH 600V 18A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	310W (Tc)	N-Channel	-	600V	18A (Tc)	400 mOhm @ 9A, 10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	10V	±30V
	APT5025BN	RFQ VIEW	PDF RFQ	2,743 In-stock	Microsemi Corporation	MOSFET N-CH 500V 23A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	310W (Tc)	N-Channel	-	500V	23A (Tc)	250 mOhm @ 11.5A, 10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	10V	±30V
	APT1001RBN	RFQ VIEW	PDF RFQ	1,288 In-stock	Microsemi Corporation	MOSFET N-CH 1000V 11A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	310W (Tc)	N-Channel	-	1000V	11A (Tc)	1 Ohm @ 5.5A, 10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	10V	±30V
	APT1001R1BN	RFQ VIEW	PDF RFQ	1,403 In-stock	Microsemi Corporation	MOSFET N-CH 1000V 10.5A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	310W (Tc)	N-Channel	-	1000V	10.5A (Tc)	1.1 Ohm @ 5.25A, 10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	10V	±30V
	APT20F50B	RFQ VIEW	PDF RFQ	2,145 In-stock	Microsemi Corporation	MOSFET N-CH 500V 20A TO-247		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]	290W (Tc)	N-Channel	-	500V	20A (Tc)	300 mOhm @ 10A, 10V	5V @ 500µA	75nC @ 10V	2950pF @ 25V	10V	±30V
	FCPF190N60-F152	RFQ VIEW	PDF RFQ	895 In-stock	ON Semiconductor	MOSFET N-CH 600V 20.2A TO-220F		SuperFET® II	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F-3	39W (Tc)	N-Channel	-	600V	20.2A (Tc)	199 mOhm @ 10A, 10V	3.5V @ 250µA	74nC @ 10V	2950pF @ 25V	10V	±20V
	FCP190N60	RFQ VIEW	PDF RFQ	2,901 In-stock	ON Semiconductor	MOSFET N-CH 600V TO220-3		SuperFET® II	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220	208W (Tc)	N-Channel	-	600V	20.2A (Tc)	199 mOhm @ 10A, 10V	3.5V @ 250µA	74nC @ 10V	2950pF @ 25V	10V	±20V
	FCPF190N60	RFQ VIEW	PDF RFQ	1,608 In-stock	ON Semiconductor	MOSFET N-CH 600V TO-220-3		SuperFET® II	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F-3	39W (Tc)	N-Channel	-	600V	20.2A (Tc)	199 mOhm @ 10A, 10V	3.5V @ 250µA	74nC @ 10V	2950pF @ 25V	10V	±20V
	FCP190N60-GF102	RFQ VIEW	PDF RFQ	3,971 In-stock	ON Semiconductor	MOSFET N-CH 600V TO-220-3		SuperFET® II	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220	208W (Tc)	N-Channel	-	600V	20.2A (Tc)	199 mOhm @ 10A, 10V	3.5V @ 250µA	74nC @ 10V	2950pF @ 25V	10V	±20V

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