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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF820ALPBF	RFQ VIEW	PDF RFQ	1,988 In-stock	Vishay Siliconix	MOSFET N-CH 500V 2.5A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	50W (Tc)	N-Channel	500V	2.5A (Tc)	3 Ohm @ 1.5A, 10V	4.5V @ 250µA	17nC @ 10V	340pF @ 25V	10V	±30V
	IRF820AL	RFQ VIEW	PDF RFQ	3,165 In-stock	Vishay Siliconix	MOSFET N-CH 500V 2.5A TO-262		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	50W (Tc)	N-Channel	500V	2.5A (Tc)	3 Ohm @ 1.5A, 10V	4.5V @ 250µA	17nC @ 10V	340pF @ 25V	10V	±30V
	IRF820A	RFQ VIEW	PDF RFQ	768 In-stock	Vishay Siliconix	MOSFET N-CH 500V 2.5A TO-220AB		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	50W (Tc)	N-Channel	500V	2.5A (Tc)	3 Ohm @ 1.5A, 10V	4.5V @ 250µA	17nC @ 10V	340pF @ 25V	10V	±30V
	IRFU9220	RFQ VIEW	PDF RFQ	2,126 In-stock	Vishay Siliconix	MOSFET P-CH 200V 3.6A I-PAK		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251AA	2.5W (Ta), 42W (Tc)	P-Channel	200V	3.6A (Tc)	1.5 Ohm @ 2.2A, 10V	4V @ 250µA	20nC @ 10V	340pF @ 25V	10V	±20V
	IRFD9220	RFQ VIEW	PDF RFQ	2,283 In-stock	Vishay Siliconix	MOSFET P-CH 200V 0.56A 4-DIP		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	4-DIP, Hexdip, HVMDIP	1W (Ta)	P-Channel	200V	560mA (Ta)	1.5 Ohm @ 340mA, 10V	4V @ 250µA	15nC @ 10V	340pF @ 25V	10V	±20V
	SSU1N50BTU	RFQ VIEW	PDF RFQ	2,075 In-stock	ON Semiconductor	MOSFET N-CH 520V 1.3A IPAK		-	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251 (IPAK)	2.5W (Ta), 26W (Tc)	N-Channel	520V	1.3A (Tc)	5.3 Ohm @ 650mA, 10V	4V @ 250µA	11nC @ 10V	340pF @ 25V	10V	±30V
	IRF820APBF	RFQ VIEW	PDF RFQ	3,680 In-stock	Vishay Siliconix	MOSFET N-CH 500V 2.5A TO-220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	50W (Tc)	N-Channel	500V	2.5A (Tc)	3 Ohm @ 1.5A, 10V	4.5V @ 250µA	17nC @ 10V	340pF @ 25V	10V	±30V
	IRFU420APBF	RFQ VIEW	PDF RFQ	3,346 In-stock	Vishay Siliconix	MOSFET N-CH 500V 3.3A I-PAK		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251AA	83W (Tc)	N-Channel	500V	3.3A (Tc)	3 Ohm @ 1.5A, 10V	4.5V @ 250µA	17nC @ 10V	340pF @ 25V	10V	±30V
	IRFU9220PBF	RFQ VIEW	PDF RFQ	696 In-stock	Vishay Siliconix	MOSFET P-CH 200V 3.6A I-PAK		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251AA	2.5W (Ta), 42W (Tc)	P-Channel	200V	3.6A (Tc)	1.5 Ohm @ 2.2A, 10V	4V @ 250µA	20nC @ 10V	340pF @ 25V	10V	±20V
	IRFD9220PBF	RFQ VIEW	PDF RFQ	905 In-stock	Vishay Siliconix	MOSFET P-CH 200V 0.56A 4-DIP		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	4-DIP, Hexdip, HVMDIP	1W (Ta)	P-Channel	200V	560mA (Ta)	1.5 Ohm @ 340mA, 10V	4V @ 250µA	15nC @ 10V	340pF @ 25V	10V	±20V

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