Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRL3202L
RFQ
VIEW
RFQ
2,393
In-stock
Vishay Siliconix MOSFET N-CH 20V 48A TO-262 - Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 69W (Tc) N-Channel - 20V 48A (Tc) 16 mOhm @ 29A, 7V 700mV @ 250µA 43nC @ 4.5V 2000pF @ 15V 4.5V, 7V ±10V
IRL3103D1
RFQ
VIEW
RFQ
3,261
In-stock
Infineon Technologies MOSFET N-CH 30V 64A TO-220AB FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 2W (Ta), 89W (Tc) N-Channel - 30V 64A (Tc) 14 mOhm @ 34A, 10V 1V @ 250µA 43nC @ 4.5V 1900pF @ 25V 4.5V, 10V ±16V
IRL3103D1PBF
RFQ
VIEW
RFQ
2,548
In-stock
Infineon Technologies MOSFET N-CH 30V 64A TO-220AB FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 2W (Ta), 89W (Tc) N-Channel - 30V 64A (Tc) 14 mOhm @ 34A, 10V 1V @ 250µA 43nC @ 4.5V 1900pF @ 25V 4.5V, 10V ±16V
IRL3202PBF
RFQ
VIEW
RFQ
1,381
In-stock
Infineon Technologies MOSFET N-CH 20V 48A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 69W (Tc) N-Channel - 20V 48A (Tc) 16 mOhm @ 29A, 7V 700mV @ 250µA 43nC @ 4.5V 2000pF @ 15V 4.5V, 7V ±10V