Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTX4N300P3HV
RFQ
VIEW
RFQ
2,475
In-stock
IXYS 2000V TO 3000V POLAR3 POWER MOSF - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant TO-247PLUS-HV 960W (Tc) N-Channel - 3000V 4A (Tc) 12.5 Ohm @ 2A, 10V 5V @ 250µA 139nC @ 10V 3680pF @ 25V 10V ±20V
FCH104N60F-F085
RFQ
VIEW
RFQ
1,009
In-stock
ON Semiconductor MOSFET N-CH 600V 37A TO247 Automotive, AEC-Q101, SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 357W (Tc) N-Channel - 600V 37A (Tc) 104 mOhm @ 18.5A, 10V 5V @ 250µA 139nC @ 10V 4302pF @ 100V 10V ±20V
TSM60NB041PW C1G
RFQ
VIEW
RFQ
603
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 78A TO247 - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 446W (Tc) N-Channel - 600V 78A (Tc) 41 mOhm @ 21.7A, 10V 4V @ 250µA 139nC @ 10V 6120pF @ 100V 10V ±30V
FCH104N60F
RFQ
VIEW
RFQ
1,056
In-stock
ON Semiconductor MOSFET N-CH 600V 37A TO-247 HiPerFET™, Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 357W (Tc) N-Channel - 600V 37A (Tc) 104 mOhm @ 18.5A, 10V 5V @ 250µA 139nC @ 10V 5950pF @ 100V 10V ±20V