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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFD9210	RFQ VIEW	PDF RFQ	1,293 In-stock	Vishay Siliconix	MOSFET P-CH 200V 0.4A 4-DIP		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	4-DIP, Hexdip, HVMDIP	1W (Ta)	P-Channel	200V	400mA (Ta)	3 Ohm @ 240mA, 10V	4V @ 250µA	8.9nC @ 10V	170pF @ 25V	10V	±20V
	IRFU9210	RFQ VIEW	PDF RFQ	1,296 In-stock	Vishay Siliconix	MOSFET P-CH 200V 1.9A I-PAK		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251AA	2.5W (Ta), 25W (Tc)	P-Channel	200V	1.9A (Tc)	3 Ohm @ 1.1A, 10V	4V @ 250µA	8.9nC @ 10V	170pF @ 25V	10V	±20V
	IRFU9210PBF	RFQ VIEW	PDF RFQ	2,181 In-stock	Vishay Siliconix	MOSFET P-CH 200V 1.9A I-PAK		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251AA	2.5W (Ta), 25W (Tc)	P-Channel	200V	1.9A (Tc)	3 Ohm @ 1.1A, 10V	4V @ 250µA	8.9nC @ 10V	170pF @ 25V	10V	±20V
	IRFD9210PBF	RFQ VIEW	PDF RFQ	1,495 In-stock	Vishay Siliconix	MOSFET P-CH 200V 0.4A 4-DIP		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	4-DIP, Hexdip, HVMDIP	1W (Ta)	P-Channel	200V	400mA (Ta)	3 Ohm @ 240mA, 10V	4V @ 250µA	8.9nC @ 10V	170pF @ 25V	10V	±20V

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