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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXTH12N150	RFQ VIEW	PDF RFQ	2,661 In-stock	IXYS	MOSFET N-CH 1500V 12A TO-247		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)	890W (Tc)	N-Channel	1500V	12A (Tc)	2 Ohm @ 6A, 10V	4.5V @ 250µA	106nC @ 10V	3720pF @ 25V	10V	±30V
	AOK60N30L	RFQ VIEW	PDF RFQ	1,630 In-stock	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 300V 60A TO247		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247	658W (Tc)	N-Channel	300V	60A (Tc)	56 mOhm @ 30A, 10V	4.1V @ 250µA	106nC @ 10V	5330pF @ 25V	10V	±30V
	SIHA21N65EF-E3	RFQ VIEW	PDF RFQ	2,246 In-stock	Vishay Siliconix	MOSFET N-CH 650V 21A TO-220		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220 Full Pack	35W (Tc)	N-Channel	650V	21A (Tc)	180 mOhm @ 11A, 10V	4V @ 250µA	106nC @ 10V	2322pF @ 100V	10V	±30V
	SIHG21N65EF-GE3	RFQ VIEW	PDF RFQ	2,861 In-stock	Vishay Siliconix	MOSFET N-CH 650V 21A TO-247AC		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC	208W (Tc)	N-Channel	650V	21A (Tc)	180 mOhm @ 11A, 10V	4V @ 250µA	106nC @ 10V	2322pF @ 100V	10V	±30V
	SIHP21N65EF-GE3	RFQ VIEW	PDF RFQ	1,763 In-stock	Vishay Siliconix	MOSFET N-CH 650V 21A TO-220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	208W (Tc)	N-Channel	650V	21A (Tc)	180 mOhm @ 11A, 10V	4V @ 250µA	106nC @ 10V	2322pF @ 100V	10V	±20V

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