Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
3,521
In-stock
IXYS MOSFET N-CH 600V 37A ISOPLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS264™ ISOPLUS264™ 360W (Tc) N-Channel - 600V 37A (Tc) 92 mOhm @ 35A, 10V 5.5V @ 8mA 265nC @ 10V 12000pF @ 25V 10V ±30V
IXFK120N30T
RFQ
VIEW
RFQ
3,936
In-stock
IXYS MOSFET N-CH 300V 120A TO-264 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 960W (Tc) N-Channel - 300V 120A (Tc) 24 mOhm @ 60A, 10V 5V @ 4mA 265nC @ 10V 20000pF @ 25V 10V ±20V
IXFX120N30T
RFQ
VIEW
RFQ
668
In-stock
IXYS MOSFET N-CH 300V 120A PLUS247 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 960W (Tc) N-Channel - 300V 120A (Tc) 24 mOhm @ 60A, 10V 5V @ 4mA 265nC @ 10V 20000pF @ 25V 10V ±20V
IXFB70N60Q2
RFQ
VIEW
RFQ
2,346
In-stock
IXYS MOSFET N-CH 600V 70A PLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 890W (Tc) N-Channel - 600V 70A (Tc) 88 mOhm @ 35A, 10V 5.5V @ 8mA 265nC @ 10V 12000pF @ 25V 10V ±30V