Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFH12N100F
RFQ
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RFQ
3,557
In-stock
IXYS-RF MOSFET N-CH 1000V 12A TO-247AD HiPerRF™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-247AD (IXFH) 300W (Tc) N-Channel 1000V 12A (Tc) 1.05 Ohm @ 6A, 10V 5.5V @ 4mA 77nC @ 10V 2700pF @ 25V 10V ±20V
IRFP450NPBF
RFQ
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RFQ
3,836
In-stock
Vishay Siliconix MOSFET N-CH 500V 14A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 200W (Tc) N-Channel 500V 14A (Tc) 370 mOhm @ 8.4A, 10V 5V @ 250µA 77nC @ 10V 2260pF @ 25V 10V ±30V
IXFH21N50F
RFQ
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RFQ
2,525
In-stock
IXYS-RF MOSFET N-CH 500V 21A TO247 HiPerRF™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXFH) 300W (Tc) N-Channel 500V 21A (Tc) 250 mOhm @ 10.5A, 10V 5.5V @ 4mA 77nC @ 10V 2600pF @ 25V 10V ±20V
IXTH48N65X2
RFQ
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RFQ
1,227
In-stock
IXYS MOSFET N-CH 650V 48A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 660W (Tc) N-Channel 650V 48A (Tc) 68 mOhm @ 24A, 10V 4.5V @ 4mA 77nC @ 10V 4420pF @ 25V 10V ±30V