Package / Case :
Supplier Device Package :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH32P20T
RFQ
VIEW
RFQ
2,014
In-stock
IXYS MOSFET P-CH 200V 32A TO-247 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) P-Channel - 200V 32A (Tc) 130 mOhm @ 16A, 10V 4V @ 250µA 185nC @ 10V 14500pF @ 25V 10V ±15V
IXTP32P20T
RFQ
VIEW
RFQ
2,028
In-stock
IXYS MOSFET P-CH 200V 32A TO-220 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) P-Channel - 200V 32A (Tc) 130 mOhm @ 16A, 10V 4V @ 250µA 185nC @ 10V 14500pF @ 25V 10V ±15V