- Manufacture :
- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,975
In-stock
|
IXYS | MOSFET N-CH | HiPerFET™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 890W (Tc) | N-Channel | - | 650V | 80A (Tc) | 38 mOhm @ 500mA, 10V | 5V @ 4mA | 140nC @ 10V | 8300pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,353
In-stock
|
Microsemi Corporation | MOSFET N-CH 200V 67A TO-247 | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 370W (Tc) | N-Channel | - | 200V | 67A (Tc) | 38 mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | 6120pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,322
In-stock
|
Microsemi Corporation | MOSFET N-CH 200V 67A TO-247 | POWER MOS V® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 370W (Tc) | N-Channel | - | 200V | 67A (Tc) | 38 mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | 6120pF @ 25V | 10V | ±30V | |||
