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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	APT5010B2FLLG	RFQ VIEW	PDF RFQ	3,466 In-stock	Microsemi Corporation	MOSFET N-CH 500V 46A T-MAX		POWER MOS 7®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	T-MAX™ [B2]	520W (Tc)	N-Channel	-	500V	46A (Tc)	100 mOhm @ 23A, 10V	5V @ 2.5mA	95nC @ 10V	4360pF @ 25V	10V	±30V
	APT5010B2LLG	RFQ VIEW	PDF RFQ	1,006 In-stock	Microsemi Corporation	MOSFET N-CH 500V 46A T-MAX		POWER MOS 7®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	T-MAX™ [B2]	520W (Tc)	N-Channel	-	500V	46A (Tc)	100 mOhm @ 23A, 10V	5V @ 2.5mA	95nC @ 10V	4360pF @ 25V	10V	±30V
	APT5010LFLLG	RFQ VIEW	PDF RFQ	2,969 In-stock	Microsemi Corporation	MOSFET N-CH 500V 46A TO-264		POWER MOS 7®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 [L]	520W (Tc)	N-Channel	-	500V	46A (Tc)	100 mOhm @ 23A, 10V	5V @ 2.5mA	95nC @ 10V	4360pF @ 25V	10V	±30V
	APT5010LLLG	RFQ VIEW	PDF RFQ	720 In-stock	Microsemi Corporation	MOSFET N-CH 500V 46A TO-264		POWER MOS 7®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 [L]	520W (Tc)	N-Channel	-	500V	46A (Tc)	100 mOhm @ 23A, 10V	5V @ 2.5mA	95nC @ 10V	4360pF @ 25V	10V	±30V

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