Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,201
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IXYS MOSFET N-CH 500V 21A TO247AD HiPerFET™ Last Time Buy - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXTH) 300W (Tc) N-Channel - 500V 21A (Tc) 250 mOhm @ 10.5A, 10V 4V @ 250µA 190nC @ 10V 4200pF @ 25V 10V ±20V
IXFH21N50Q
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2,188
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IXYS MOSFET N-CH 500V 21A TO-247 HiPerFET™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 280W (Tc) N-Channel - 500V 21A (Tc) 250 mOhm @ 10.5A, 10V 4.5V @ 4mA 84nC @ 10V 3000pF @ 25V 10V ±30V
IXFH21N50F
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2,525
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IXYS-RF MOSFET N-CH 500V 21A TO247 HiPerRF™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXFH) 300W (Tc) N-Channel - 500V 21A (Tc) 250 mOhm @ 10.5A, 10V 5.5V @ 4mA 77nC @ 10V 2600pF @ 25V 10V ±20V
IXTH21N50
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1,117
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IXYS MOSFET N-CH 500V 21A TO-247 MegaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) N-Channel - 500V 21A (Tc) 250 mOhm @ 10.5A, 10V 4V @ 250µA 190nC @ 10V 4200pF @ 25V 10V ±20V
IXFH21N50
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1,820
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IXYS MOSFET N-CH 500V 21A TO-247AD HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 300W (Tc) N-Channel - 500V 21A (Tc) 250 mOhm @ 10.5A, 10V 4V @ 4mA 160nC @ 10V 4200pF @ 25V 10V ±20V